仪器简介:
PE2000型的腔体和电极zei大程度满足等离子体工艺处理的需求,从简单的表面处理到高尖端的亚微米级别的蚀刻及去胶
The Model PE 2000 Plasma Etcher is specifically designed for etching and deprocessing of microelectronic devices. The PE 2000 is a small, tabletop sized instrument designed for performing small-scale R&D applications as well as process development for pilot production applications. The PE 2000 is a mechanical pumped system capable of reaching a base pressure of 1mTorr, with the low base pressure providing a clean vacuum and etch environment. Wafers up to 6” diameter as well as irregularly shaped substrates can be accommodated in the 200 mm diameter vacuum chamber. A fully manual control system coupled with digital readouts on the PE 2000 offers a wide range of experimental etch parameters, and is not limited to routine, automated processing ranges.
All of the gas delivery systems and the chamber itself are manufactured from stainless steel, including the gas delivery in the chamber. The delivery maximizes etch uniformity and provides the best geometry for utilizing the reactive gas species. Gas lines, fittings, and stage construction provide corrosion resistance during processing, and the system requires little maintenance. Optional accessories such as cold cathode gauges, mass flow controllers, and gas pod housings make the PE 2000 an excellent laboratory instrument.
技术参数:
1,真空泵: 43l/min两级直接驱动防腐机械泵,系统本底真空20mTorr,通常操作真空度是50-200mTorr
2,真空显示:电容规,数字前端面板显示,单位mTorr
3, 真空腔体:石英,8英寸外径,4英寸高
4, 射频功率:范围0—150w ,13.56MHz,手动调谐,空气冷却
5, 工作时间:刻蚀zei多时间 99:99:59,然后自动终止
6, 输入功率: 230VA,50Hz,10/ 5安培
7, 系统卸真空:独立的互锁电磁阀,可连接洁净氮气
8, 气体输送: 两个独立气体通道,分别由高精度针阀和电磁阀控制。
9, 气体控制:两个独立的针阀,具有安全互锁功能
10, 样品台:6英寸不锈钢台
11, 射频显示:数字LCD面板显示,前端和反馈功率
12, 直流偏压:数字LCD面板显示
13, 系统重量:60磅,不含泵的重量
14, 系统尺寸: 20.25" W x 16" D x 15" H
常用工艺参数:
Photoresist Etch
gas | 100% O2 |
operating pressure | 100 millitorr |
power level | 100 watts |
etch rate | 997 angstroms/min |
uniformity | +/- 5% |
Nitride Etch
gas | 95% CF4 / 5% O2 |
operating pressure | 100 millitorr |
power level | 100 watts |
etch rate | 450 angstroms/min |
uniformity | +/- 5% |
BiPolar Silicon Glass (BPSG) Etch
gas | 95% CF4 / 5% O2 |
operating pressure | 100 millitorr |
power level | 100 watts |
etch rate | 520 angstroms/min |
uniformity | +/- 5% |
PolySilicon Glass (PSG) Etch
gas | 95% CF4 / 5% O2 |
operating pressure | 100 millitorr |
power level | 100 watts |
etch rate | 450 angstroms/min |
uniformity | +/- 5% |
Oxide Etch (SiO2)
gas | 95% CF4 / 5% O2 |
operating pressure | 100 millitorr |
power level | 100 watts |
etch rate | 200 angstroms/min |
uniformity | +/- 10% |
Aluminum Etch*
gas | 80% BCl3 /20% Cl2 |
operating pressure | 150 millitorr |
power level | 150 watts |
etch rate | 200 angstroms/min |
uniformity | +/- 5% |
等离子体去胶及刻蚀机,PE2000
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