"Best Known Method" recipes available for users for the above and for other materials (full list available on request)
EVG®301
Features
High-efficiency cleaning using 1 MHz megasonic nozzles or area transducers (option)
Brush scrubbing for single-side cleaning (option)
Diluted chemicals for wafer cleaning
Prevents cross-contamination from back to front side
Fully software controlled cleaning process
Options
Pre-bonding station with IR-inspection
Tooling for non-SEMI standard substrates
echnical Data
Wafer diameter (substrate size)200, 100 - 300 mmCleaning systemOpen chamber, spinner and cleaning armChamber: made of PP or PFA (option)Cleaning media: DI-water (standard), other cleaning media (option)Spinner chuck: vacuum chuck (standard) and edge handling chuck (option) made of metal ion free and clean materialsRotation: up to 3000 rpm (in 5 sec)Megasonic nozzleFrequency: 1 MHz (3 MHz option)Output power: 30 - 60 WDI-water flow rate: up to 1.5 liter/minEffective cleaning area: Ø 4.0 mmMaterial: PTFEMegasonic area transducerFrequency: 1 MHz (3 MHz option)Output power: max. 2.5 W/cm² active areas (max. output 200 W)DI-water flow rate: up to 1.5 liter/minEffective cleaning area: triangle shape that guarantees radio uniformity on whole wafers per each rotationMaterial: SS and sapphireBrushMaterial: PVAProgrammable parameters: brush and wafer speed (rpm)Adjustable parameters (brush compression, media dispense)