SOI键合EVG®810 LT+EVG®301

Name: SOI键合EVG®810 LT+EVG®301
Brand: EVG
SKU: EVG®810 LT+EVG®
Price: 700000 CNY
Availability: InStock

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参考价：￥700000

品牌：EVG 产地：奥地利型号：EVG®810 LT+EVG® 样本：来电或留言获取样本

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产地类别：进口

供应商性质：生产商

产品介绍

产品描述

EVG®810 LT

Features

Surface plasma activation for low-temperature bonding (fusion/molecular and intermediate layer bonding)
Fastest kinetics of any wafer bonding mechanism
No wet processes required
Highest bond strength at low temperature annealing (up to 400 °C)
Applicable for SOI, MEMS, compound semiconductors, and advanced substrates bonding
High degree of materials compatibility (including CMOS)

Technical Data

Wafer diameter (substrate size)
50 - 200, 100 - 300 mm

LowTemp™ plasma activation chamber
Process gases: 2 standard process gases (N2 and O2)
Universal mass flow controller: self-calibrating (up to 20.000 sccm)
Vacuum system: 9x10-2 mbar
Opening / closing of chamber: automated
Loading / unloading of chamber: manual (wafer / substrate placed on loading pins)

Optional features
Chuck for different wafer sizes
Metal ion-free activation
Additional process gases with gas mixing
High vacuum system with turbo pump: 9x10-3 mbar base pressure

Material systems that are qualified with LowTemp™ plasma activated bonding
Si: Si/Si, Si/Si (thermally oxidized, Si (thermally oxidized)/Si (thermally oxidized)
TEOS/TEOS (thermally oxidized)
Si/Ge for Germanium-on-Insulator (GeOI)
Si/Si3N4
Glass (borofloat, non-alkali): Si/Glas, Glass/Glass
Compound semiconductors: GaAs, GaP, InP
Polymers: PMMA, Cyclo Olefin Polymers
"Best Known Method" recipes available for users for the above and for other materials (full list available on request) EVG®301 Features High-efficiency cleaning using 1 MHz megasonic nozzles or area transducers (option) Brush scrubbing for single-side cleaning (option) Diluted chemicals for wafer cleaning Prevents cross-contamination from back to front side Fully software controlled cleaning process Options Pre-bonding station with IR-inspection Tooling for non-SEMI standard substrates echnical Data Wafer diameter (substrate size)200, 100 - 300 mmCleaning systemOpen chamber, spinner and cleaning armChamber: made of PP or PFA (option)Cleaning media: DI-water (standard), other cleaning media (option)Spinner chuck: vacuum chuck (standard) and edge handling chuck (option) made of metal ion free and clean materialsRotation: up to 3000 rpm (in 5 sec)Megasonic nozzleFrequency: 1 MHz (3 MHz option)Output power: 30 - 60 WDI-water flow rate: up to 1.5 liter/minEffective cleaning area: Ø 4.0 mmMaterial: PTFEMegasonic area transducerFrequency: 1 MHz (3 MHz option)Output power: max. 2.5 W/cm² active areas (max. output 200 W)DI-water flow rate: up to 1.5 liter/minEffective cleaning area: triangle shape that guarantees radio uniformity on whole wafers per each rotationMaterial: SS and sapphireBrushMaterial: PVAProgrammable parameters: brush and wafer speed (rpm)Adjustable parameters (brush compression, media dispense)