高速大面积共聚焦拉曼成像系统

高速大面积共聚焦拉曼成像系统

超高性价比共焦拉曼成像系统！ 

高分辨率！

出色的重复性！

使用全息透射光栅，光透过率高！

可扩展/ 定制！

200µm x 200µm 图像快速扫描 & 2D Mapping！

韩国NANOBASE公司专业生产高性价比共聚焦拉曼成像系统，为科学和工业领域提供zei高性价比解决方案。新用户可以从购买基础款的A Van Der Waals Homojunction: Ideal p–n Diode Behavior in MoSe₂.pdf- Advanced Materials

（2）   SemiconductorInsulator Semiconductor Diode Consisting of Monolayer MoS², h‑BN, and GaN Heterostructure.pdf–ACS Nano 

摘要：We propose a semiconductorinsulatorsemiconductor (SIS) heterojunction diode consisting of monolayer (1-L) MoS2, hexagonal boron nitride (h-BN), and epitaxial p-GaN that can be applied to high-performance nanoscale optoelectronics. The layered materials of 1-L MoS2 and h-BN, grown by chemical vapor deposition, were vertically stacked by a wet-transfer method on a p-GaN layer. The final structure was verified by confocal photoluminescence and Raman spectroscopy. Currentvoltage (IV) measurements were conducted to compare the device performance with that of a more classical pn structure. In both structures (the pn and SIS heterojunction diode), clear current-rectifying characteristics were observed. In particular, a current and threshold voltage were obtained for the SIS structure that was higher compared to that of the pn structure. This indicated that tunneling is the predominant carrier transport mechanism. In addition, the photoresponse of the SIS structure induced by the illumination of visible light was observed by photocurrent measurements.

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