Measurement Material: Semiconductors material such as Si, SiGe, SiC,GaAs, InGaAs, InP, GaN, ITO (N Type & P Type) 测试材质:半导体类材质、如: Si, SiGe, SiC, ZnO, GaAs, InGaAs, InP, GaN, ITO等所有半导体薄膜(P型和N型)
2-4
Magnet Flux Density: 0.68 Tesla nominal ±1% of marked value 磁场强度: 0.68 Tesla ±1%
2-5
Magbnet Stability: ±2% over 1 years 稳定性: ±2% (一年后)
2-6
Uniformity: ± 1% over 20mm diameter from center 均匀度:± 1%(20mm直径圆范围内)
2-7
Pole Gap: 20 mm 磁极间隙:20毫米
2-8
Input voltage range: 1μV to 300V 输入电压范围:1μV ~300V
2-9
Hall voltage range: 10uV to 2000mV 霍尔电压范围: 10uV to 2000mV
2-10
Resistivity (Ohm.cm): 10-5 to 107 电阻率 (Ω.㎝): 10-5 to 107