Si, SiGe, SiC, GaAs, InGaAs, InP, GaN (N Type & P Type)等材质的半导体薄膜中载流子类型、载流子浓度、迁移率、电阻率、霍尔系数等参数
3-2
磁场:
3-2-1
磁场强度:
0.45T 永磁体
3-2-2
磁场类型:
永磁体
3-2-3
磁场均匀性:
磁场不均匀性<±1 % 10年内磁场变化<±0.2%
3-3
温 度:
3-3-1
温度区域:
77K(液氮温度)或室温
3-4
电阻率范围:
1 µ Ohm*cm ~10 M Ohm*cm
3-5
电阻范围:
0.1 m Ohms ~10 G Ohms
3-6
载流子浓度:
107~1021cm-3
3-7
迁移率:
10-2~107 cm2/volt*sec
3-8
输入电流:
3-8-1
电流范围:
1000 pA~10mA
3-8-2
电流解析度:
2.5 pA (lowest range)
3-8-3
电流精度:
2%
3-9
输入电压:
3-9-1
电压范围:
±10V
3-9-2
电压分辨率:
1μV
4.
仪器特点:
4-1
Automatic contact check 自动接触检查(欧姆接触)
4-2
Routine and enhanced software 常规和增强软件
4-3
Differential resistivity measurements by I/V-curves I/V曲线测试电阻率差异
4-4
Misalignment voltage compensation 失调电压补偿
4-5
Correction of slow sample drift voltage, especially for ZnO, 修正慢样品漂移电压,特别是氧化锌
4-6
Automatic field calibration 自动现场标定
4-7
Large concentration and resistivity range 大浓度和电阻率范围
4-8
Flexible, modular hardware 灵活的模块化硬件
4-9
Support of various magnets, for example BioRad HL 5200 支持多样磁场
4-10
Support of various temperature controllers 支持各种温度控制器(支持客户自行升级变温系统)
5
硬件
5-1
The standard system consists of a bench top electronic system, a small magnet and a sample stage for room temperature and LN2 measurements. 标准系统包含电子测试系统、磁场和两个温度区域的测试平台(室温和液氮温度)
5-2
The electronics include the current source, the voltage measurement part, the contact switching module and the IEEE or RS232 interface. It is completely micro processor controlled. 电子测试系统包括由单片机控制的电流源、电压测试、接触开关模块、IEEE或RS232接口
5-3
The contact switching module is designed to allow all possible measurement configurations. 接触开关模块支持所有用户用于其他的配置(用户可以采用制冷机做变温霍尔测试)
5-4
The current source has adjustable limits for voltage and/or power. {+++} 电流源具有可调电压和/或电源的限制
5-5
Voltage measurement provides different input amplifiers optimized for either low current or low voltage applications. 电压测量提供了不同的输入放大器或低电流或低电压应用的优化。