X射线探测器以热电冷却的Si-Pin光电二极管作为X射线探测元器件,根据不同探测器类型和峰化时间,55Fe的5.9KeV峰值分辨率可达145eV; FAST SDD 探测器峰值分辨率更可达122eV,为业界领先指标。
XR-100系列
探测器型号
探测器材料
探测器面积
探测器厚度
铍(Be)窗 厚度
备注
XY-FSG32MD-G3SP
Si-PIN
6 mm2
500 μm
1 mil
有内置准直器
XY-FS432MD-G3SP
Si-PIN
13mm2
500 μm
1 mil
有内置准直器
XY-FSJ32MD-G3SP
Si-PIN
25mm2
500 μm
1 mil
有内置准直器
XY-FSG32MD-G2SP
Si-PIN
6mm2
500 μm
0.5mil
有内置准直器
XY-GSH3AMD-G2SP
SDD
25mm2
500 μm
0.5mil
有内置准直器
XY-GSH3AMD-E1SP
SDD
25mm2
500 μm
0.3mil
有内置准直器
XY-GSH3AMD-UOEA
SDD
25mm2
500 μm
C1 Window
有内置准直器
XY-GSH3AMD-E6EA
SDD
25mm2
500 μm
C2 Window
有内置准直器
XY-HSH3AMD-G2S
FAST SDD
25mm2
500 μm
0.5mil
有内置准直器
XY-HSH3AMD-G1S
FAST SDD
25mm2
500 μm
0.3mil
有内置准直器
XY-HSH3AMD-U0EA
FAST SDD
25mm2
500 μm
C1 Window
有内置准直器
XY-HSH3AMD-E6EA
FAST SDD
25mm2
500 μm
C2 Window
有内置准直器
** Silicon Drift Detector (SDD) uses a junction gate field-effect transistor (JFET) inside the hermetically sealed TO-8 package, along with an external preamplifier. FAST SDD uses a complementary metal-oxide-semiconductor (CMOS) preamplifier inside the TO-8 package, and replaces the JFET with a metal-oxide-semiconductor field-effect transistor (MOSFET).