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领域: | 电子/电器/半导体 | ||
样品: | 纳米级厚度的高k介电材料 | 项目: | 厚度,光学常数,纳米级尺寸的界面 |
方案文件名 | 下载 |
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使用VUV椭圆偏振光谱仪和FTIR-ATR对纳米级厚度的高k介电材料进行研究 |
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Optical characterization techniques proved to be complementary to optimize highmaterials used in microelectronic applications.
This note shows that the VUV wavelength range of the UVISEL Phase Modulated Ellipsometer is particularly suitable for the accurate characterization of high-K film thickness and interfaces with nanoscale dimensions as well as optical properties and bandgap.